SKM150GB17E4GH16 ? by semikron rev. 1.0 ? 05.04.2017 1 semitrans ? 3 gb igbt4 modules SKM150GB17E4GH16 features ? h16: igbt-chip with improved robustness against moisture ? igbt4 = 4. generation medium fast trench igbt (infineon) ? cal4 = soft switching 4. generation cal-diode ? insulated copper baseplate using dbc technology (direct copper bonding) ? with integrated gate resistor ? for switching frequencies up to 8khz ? ul recognized, file no. e63532 typical applications* ? medium voltage inverter market remarks ? case temperature limited to t c = 125c max. ? recommended t op = -40 ... +150c ? product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1700 v i c t j = 175 c t c =25c 255 a t c =80c 194 a i cnom 150 a i crm i crm = 3xi cnom 450 a v ges -20 ... 20 v t psc v cc = 1000 v v ge 15 v v ces 1700 v t j =150c 10 s t j -40 ... 175 c inverse diode v rrm t j =25c 1700 v i f t j = 175 c t c =25c 163 a t c =80c 121 a i fnom 150 a i frm i frm = 2xi fnom 300 a i fsm t p = 10 ms, sin 180, t j =25c 918 a t j -40 ... 175 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =150a v ge =15v chiplevel t j =25c 1.96 2.27 v t j =150c 2.29 2.54 v v ce0 chiplevel t j =25c 1.10 1.20 v t j =150c 1.00 1.10 v r ce v ge =15v chiplevel t j =25c 5.7 7.1 m t j =150c 8.6 9.6 m v ge(th) v ge =v ce , i c = 5.6 ma 5.2 5.8 6.4 v i ces v ge =0v, v ce = 1700 v, t j =25c 2.0 ma c ies v ce =25v v ge =0v f=1mhz 11.0 nf c oes f=1mhz 0.46 nf c res f=1mhz 0.36 nf q g v ge = - 8 v...+ 15 v 1200 nc r gint t j =25c 8.0 t d(on) v cc = 1200 v i c =150a v ge = +15/-15 v r g on =1 r g off =1 di/dt on = 4530 a/s di/dt off =880a/s du/dt = 4000 v/s t j =150c 290 ns t r t j =150c 38 ns e on t j =150c 69 mj t d(off) t j =150c 690 ns t f t j =150c 155 ns e off t j =150c 59 mj r th(j-c) per igbt 0.161 k/w r th(c-s) per igbt ( grease =0.81 w/(m*k)) 0.064 k/w
SKM150GB17E4GH16 2 rev. 1.0 ? 05.04.2017 ? by semikron semitrans ? 3 gb igbt4 modules SKM150GB17E4GH16 features ? h16: igbt-chip with improved robustness against moisture ? igbt4 = 4. generation medium fast trench igbt (infineon) ? cal4 = soft switching 4. generation cal-diode ? insulated copper baseplate using dbc technology (direct copper bonding) ? with integrated gate resistor ? for switching frequencies up to 8khz ? ul recognized, file no. e63532 typical applications* ? medium voltage inverter market remarks ? case temperature limited to t c = 125c max. ? recommended t op = -40 ... +150c ? product reliability results valid for t j = 150c characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 150 a v ge =0v chiplevel t j =25c 2.00 2.40 v t j =150c 2.14 2.56 v v f0 chiplevel t j =25c 1.32 1.56 v t j =150c 1.08 1.22 v r f chiplevel t j =25c 4.5 5.6 m t j =150c 7.1 9.0 m i rrm i f = 150 a di/dt off =4100a/s v ge =15v v cc = 1200 v t j =150c 185 a q rr t j =150c 49 c e rr t j =150c 36 mj r th(j-c) per diode 0.356 k/w r th(c-s) per diode ( grease =0.81 w/(m*k)) 0.072 k/w module l ce 15 nh r cc'+ee' measured per switch t c =25c 0.55 m t c =125c 0.85 m r th(c-s)1 calculated without thermal coupling ( grease =0.81 w/(m*k)) 0.017 k/w r th(c-s)2 including thermal coupling, ts underneath module ( grease =0.81 w/(m*k)) 0.027 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g
SKM150GB17E4GH16 ? by semikron rev. 1.0 ? 05.04.2017 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM150GB17E4GH16 4 rev. 1.0 ? 05.04.2017 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM150GB17E4GH16 ? by semikron rev. 1.0 ? 05.04.2017 5 semitrans 3 gb
SKM150GB17E4GH16 6 rev. 1.0 ? 05.04.2017 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes.
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